ELLIPSOMETRIC CONTROL OF SURFACE TEMPERATURE
CHANGES OF SEMICONDUCTOR MATERIALS IN
VACUUM
Yu. I. Asalkhanov, V. N. Abarykov*, E. L. Saneev, E. Ch. Daribazaron
East-Siberian State University of Technology,
Ulan-Ude
*Buryat Scientific Centre SD of RAS, Ulan-Ude
The temperature dependences for ellipsometric parameters
of optically polished samples of semiconductor materials at various stages
of clearing from the adsorbed gases and remains of oxides are obtained.
The cleaning was done by high heating in super-high vacuum. The established
direct proportional dependence of the ellip-sometric parameter PSI on temperature
for Si(111) monocrystals proves the effectiveness of the ellipsometric
method in its unconventional use, that is for contactless measurement
of temperature changes of semiconductor materials in vacuum. The results
are discussed.