A. V. Golubev, V. V. Akulinichev
Institute for Analytical Instrumentation RAS, Saint-Petersburg
The paper presents a brief
outline of a method for studying temporal and spectral characteristics
of soft X-ray detectors in the photon energy range from several tens to
a thousand of electron-volts. The measured characteristics (signal rise
time, temporal resolution, absolute spectral sensitivity) are given as
well as parameters calculated from the measured data (thicknesses of contact,
"dead", and sensitive layers) of some types of fast silicon p-i-n photodiodes
from different manufacturers (Siemens; Hamamatsu; Motorola; RIIT, Moscow),
which may be used in the instrumentation for X-ray plasma diagnostics with
a temporal resolution of 1 ns and better.