Applicability of AFM-based nanooxidation to InGaAs on InP is investigated in details.  The oxide protrusions are successfully formed on n-InGaAs with AFM-nanooxidaion. Oxide is easily etched in HF solution. Oxide lines with a height of more than 6 nm and width of less than 50 nm are successfully formed. The influence of the tapping mode on improvement of geometrical parameters of oxide protrusions is demostrated. The oxide nature of  lines and dots is shown.