InAs/Si  BASED  HETEROSTRUCTURES  AS  THE  COMPONENT TECHNOLOGY  FOR  NEW  GENERATION
NANO-  AND  OPTOELECTRONIC  DEVICES

V. N. Petrov, N. K. Polyakov, V. A. Egorov, A. O. Golubok, G. E. Tsirlin,
D. V. Denisov*, A. F. Tsatsulnikov*, A. Yu. Egorov*, N. A. Maleev*, 
V. M. Ustinov*

Institute for Analytical Instrumentation RAS, Saint-Petersburg
*A.F. Ioffe Physicotechnical Institute RAS, Saint-Petrsburg


 



    This paper presents a summary of experimental results obtained at the Institute of Analytical Instrumentation RAS in association with A.F. Ioffe Physicotechnical Institute RAS on MBE forming of InAs/Si quantum -dimensional heterostructures, including those with quantum dots, and their studies by RHEED, STM, SEM, TEM, XMA and PL techniques for new generation opto- and microelectronics devices to combine the application of A3B5 and silicon technologies.