V. N. Petrov, N. K. Polyakov,
V. A. Egorov, A. O. Golubok, G. E. Tsirlin,
D. V. Denisov*, A. F. Tsatsulnikov*,
A. Yu. Egorov*, N. A. Maleev*,
V. M. Ustinov*
Institute for Analytical Instrumentation RAS,
Saint-Petersburg
*A.F. Ioffe Physicotechnical Institute RAS,
Saint-Petrsburg
This paper presents a summary
of experimental results obtained at the Institute of Analytical Instrumentation
RAS in association with A.F. Ioffe Physicotechnical Institute RAS on MBE
forming of InAs/Si quantum -dimensional heterostructures, including those
with quantum dots, and their studies by RHEED, STM, SEM, TEM, XMA and PL
techniques for new generation opto- and microelectronics devices to combine
the application of A3B5 and silicon technologies.