The role of thermal evaporation in secondary-ion mass spectrometryff

Yu. P. Kostikov, V. S. Strykanov, N. L. Chetnius

3

Molecular-flow induced secondary-ion emission

V. F. Popov

8

Some special features of SIMS analysis of the atmospheric gas content at the surface of materials

A. A. Dorozhkin, A. P. Kovarsky, A. V. Li-Fatu

13

Secondary-ion mass speatrometry diagnostics of the implanted silicon layers

G. M. Gurianov, A. P. Kovarsky

17

Hydrogen in vanadium, niobium, tantalum

A. P. Kovarsky, A. V. Li-Fatu, A. A. Dorozhkin

26

Analysis of low-dimensional semiconductor heterostructures

B. Ya. Ber, Au. B. Merkulov

31

Ion diagnostics of the effective thermoemitter surfaces in power electron devices

O. L. Luksha, O. Yu. Tsibin

35

Mossbauer grazing incidence spectrometry as applied to the investigation of the ultrathin surface layers. II. The theory of grazing incidence Mossbauer spectra

S. M. Irkaev, M. A. Andreev, V. G. Semenov, G. N. Belozersky, O. V. Grishin

43

Analysis of structural disorder distributions in single crystal

A. V. Kotov

62

The dynamics of III-V group semiconductor compounds growth in molecular-beam epitaxy: Computer simulation

A. G. Filaretov, A. A. Mayorov, G. E. Tsyrlin

68

Model time dependences of median height

V. G. Dubrovsky

74

Phisical and mathematical models of clustering

G. V. Dubrovsky, V. G. Dubrovsky, Yu. E. Gorbachev

85

Using a crossed lens as a test model to calculate three-dimensional fields

L. A. Baranova, A. S. Berdnikov, R. A. Bubliaev, O. A. Grineva, V. Ya. Ivanov, S. Ya. Yavor

105